ACRT-B相关论文
基于对ACRT－B法晶体生长时对流及传质特性的认识，提出了ACRT－B法晶体生长过程的一维传质模型得到了包括初始过渡区、稳态区及终端过渡......
MnxCd1-xIn2Te4 (x=0.1) ingot was successfully grown by the modified Bridgman technique, which applied the accelerated cr......
ＣｄＭｎＴｅ是近年来出现的一种新型半导体材料，由于材料中含有磁性Ｍｎ＾２＋离子，所以又称之为稀释磁性半导体。它具有独特的磁学，光学，电学性质，同时也可用......
MnxCd1-xIn2Te4 (x=0.1) ingot was successfully grown by the modified Bridgman technique, which applied the accelerated cr......
